摘要
本文给出了关于半绝缘GaAs中1.06μm ps光脉冲产生的自由电子的理论及计算结果,并讨论了从深能级跃迁与双光子跃迁的自由电子浓度的空间Fourier分量随激发光强度的变化。
The theory and calculation results of the free electrons generated by picosecond light pulses at 1.064μm in semi-insulating GaAs are presented, and the variation of the spatial Fourier components of the free-electron density from deep levels and two-photon absorption versus the intensity of excitation pulses is discussed.
出处
《中国激光》
EI
CAS
CSCD
北大核心
1990年第12期717-720,共4页
Chinese Journal of Lasers
