摘要
IC 3D集成需要穿透硅互连技术,也就是需要实现晶圆一侧到另一侧的电互连。很多穿透硅互连技术的应用需要在表面起伏很大的晶圆表面光刻图形,这就要先在晶圆表面均匀涂布光刻胶层。文章研究了光刻胶AZ4620的雾化喷涂性能,在沈阳芯源微电子设备有限公司KS-M200-1SP喷雾式涂胶机上进行了雾化喷涂试验,对光刻胶流量、扫描速度、热板温度等工艺参数进行了研究以找到适合硅通孔喷涂的工艺配方。对光刻胶雾化喷涂技术的难点做了探讨并提出加热吸盘的解决方案,找到了得到最佳覆盖性和表面粗糙度的热盘温度。
3D integration requires a through-Si interconnects, i.e. an integration of electrical connection from one side of the wafer to the other side. In many cases, it involves the lithographic patterning over high topography. For this step, a conformal coating of photoresist layer is necessary. In this paper, a spray coating process of AZ4620 resist has been investigated. The process is developed in KS-M200-1SP spray coating equipment of KINGSEMI Co.,Ltd. Parameters of the spray process such as dispense rate, scan speed and chuck temperature have been studied to find out proper process for the application of through-Si interconnects. Some limitations for patterning inside the vias are also discussed and hot chuck to overcome these limitations are proposed. Suitable temperature has been found out to obtain the best coverage and surface roughness.
出处
《电子与封装》
2012年第2期30-32,43,共4页
Electronics & Packaging
关键词
硅通孔
光刻胶
雾化喷涂
加热吸盘
through-Si interconnects
photoresist
spray coating
hot chuck
