摘要
概述了电子封装基片材料的基本性能要求;讨论了SiC陶瓷基片常用的4种烧结工艺,即常压烧结、热压烧结、反应烧结和放电等离子烧结;介绍了SiCp/Al复合材料的制备方法,即搅拌铸造法、无压渗透法、喷射沉积法、粉末冶金法;据此进一步提出了SiC陶瓷基片材料的发展方向。
The elemental requirements for electronic packaging substrate materials are introduced. Four sinte- ring technologies are analyzed, i.e. pressureless sintering, hot press sintering, reacted sintering and spark plasma sin- tering. The preparation methods of SiCp/A1 composites are described, i.e. stir casting method, pressureless infiltra- tion method, spray deposition method, powder metallurgy method. Future trends are put forward accordingly.
出处
《材料导报》
EI
CAS
CSCD
北大核心
2012年第5期36-39,共4页
Materials Reports
基金
国家民口配套科研项目(MKPT-03-182)
