摘要
介绍了应变量子阱材料单结点失配位错能量平衡模型;计算了一些典型量子阱结构的阱层临界应变和应变体材料的最大允许应变。报告了No.558压应变量子阱材料的实际阱层应变和No.9182材料非应变盖层对有源层带隙的影响。指出了非应变盖层对整个材料力学稳定性的提高有促进作用。
An energy equilibrium model for the strained quantum well(QW)materials contained some of the single kink misfit dis location is introduced in this paper.The critical strain of the well layer for some typical QW and the biggest allowable strain of the strained bulk materials are calculated.We presented the effect of the actual strain of well lager from No.588 compressed strained QW materials and the un strained cap of No.9182 material on the energy gap,and pointed out that the un strained cap is of great advantage to stability of a whole multilayer structure material.The differences between the calculated value and the measured are discussed.
出处
《半导体技术》
CAS
CSCD
北大核心
2000年第1期46-49,共4页
Semiconductor Technology
