摘要
本文对比探索了新型Al/α-Si/Al三明治结构与传统的Al/α-Si双层结构对铝诱导非晶硅薄膜低温晶化结果的影响,结果表明在相同的制备及退火条件下,前者更利于形成高度晶化的多晶硅薄膜。本研究工作利用拉曼光谱、掠入射X射线衍射、光学显微镜、方块电阻等表征方法探讨了薄膜厚度比和退火温度对金属诱导非晶硅薄膜晶化的程度、晶体结构以及电学性能的影响,最终制备出了电阻率仅为2.5Ω.cm的多晶硅薄膜。
Aluminum-induced crystallization of amorphous silicon has been studied as a promising low-temperature alternative to solid-phase and laser crystallization. In our work, comparison of the influence on crystallization between novel Al/α-Si/Al sandwich structure and normal Al/α-Si bilayer structure was investigated. The results show that inthe same preparation and annealing conditions the former structure is more beneficial to the formation of high crystallized polysilicon thin film. Raman spectroscopy, grazing-incidence X-ray diffraction, optical microscopy and four-point probe measurement were employed to study theeffects of Al/α-Si thickness ratio and annealing temperature on the crystallization degree, crystal structure and electrical properties. High-quality continuous polycrystalline silicon with resistivity of 2.5Ω.cm by aluminum-induced crystallization was prepared.
出处
《真空》
CAS
2012年第1期45-47,共3页
Vacuum
关键词
铝诱导结晶
三明治结构
多晶硅薄膜
aluminum-induced crystallization
sandwich structure
polysilicon thin film
