摘要
通过应用Scharfetter-Gummel解法数值求解泊松方程,对经高强度光辐照过的a-Si/poly-Si叠层太阳能电池进行计算机数值模拟分析。结果表明,光生空穴俘获造成的a-Si∶H中正空间电荷密度增加改变了电池内部的电场分布,普遍抬高a-Si∶H薄膜中电场强度。在光照射下,空间电荷效应不会给a-Si/poly-Si叠层结构中的a-Si∶H薄膜带来准中性区(低场“死层”),因而没有发生a-Si/poly-Si叠层太阳能电池的光诱导性能衰退。a-Si/poly-Si叠层结构太阳能电池具有较高的光稳定性。
A computer simulation model of a Si/poly Si tandem solar cells subjected to light soaking using a Scharfetter Gummel solution of Poisson equation has been analyzed.The results indicate that due to photo generated hole trapping,the increased positive space charge density changes the electric field distribution and raises the electric intensity throughout the a Si∶H film.Under illumination,the space charge effects cant cause a quasineutral region(low field“dead layer”)in a Si∶H film of a Si/poly Si tandem structures,without light induced degradation in a Si/poly Si tandem solar cells.The a Si/poly Si tandem structure possesses high light stability.
出处
《半导体技术》
CAS
CSCD
北大核心
2000年第1期50-52,56,共4页
Semiconductor Technology
基金
国家自然科学基金资助项目 !( 5 9872 0 3 7)
安徽省自然科学基金资助项目! ( 986 4 15 5 0 )
关键词
太阳能电池
稳定性
叠层
硅
Light induced degradation in a Si∶H Space charge effect Density of states in a Si∶H Newton Raphson solution
