摘要
研制了一种GaAs基波长可调谐共振腔增强型探测器.采用分子束外延设备生长In_(0.25)Ga_(0.75)As/GaAs量子阱作为器件的有源区,无偏压时器件的响应峰波长在1071 nm,器件在21 V的直流调谐电压下,实现了波长大于23 nm的调谐.统计结果表明,当调谐电压大于5 V时,调谐电压与响应波长之间具有稳定、精确的对应关系,且近似线性调谐,同时对器件响应峰的特性进行了理论分析.
A wavelength tunable resonant cavity enhanced photo-detector grown on GaAs is fabricated.The quantum wells of In_（0.25）Ga（0.75）As/GaAs in the active region are grown by molecular beam epitaxy.The peak of the response spectrum at 0 work bias is located at 1071 nm.When the tuning voltage rises from 0 V to 21 V,the peak shows a blue shift of 23 nm,reaching 1048 nm.Statistical results show that there is a stable accurate corresponding relation between the tuning voltage and the response peak.The relation is approximately linear when the tuning voltage is greater than 5 V.Some theoretical analysis is performed on the test results.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
2012年第1期499-503,共5页
Acta Physica Sinica
基金
国家重点基础研究发展计划(批准号:2006CB302802)
国家高技术研究与发展计划(批准号:2007AA03Z421)
国家自然科学基金(批准号:60376025
61176053)资助的课题~~
关键词
GAAS
共振腔增强型探测器
高稳定
线性调谐
GaAs
resonant cavity enhanced photo-detector
high stability
linear tuning
