摘要
设计了一种0.13μm BiCMOS低压差线性稳压器(LDO),包括BiCMOS误差放大器、带软启动的BiCMOS带隙基准源、"套筒式"共源-共栅补偿电路等。为了改善线性瞬态响应性能,在BiCMOS误差放大器的前级设置了动态电流偏置电路。由于所设计的BiCMOS带隙基准源对温度的敏感性较小,故能为LDO提供高精度的基准电压。对所设计的LDO进行了工艺流片。流片测试结果表明,该LDO可提供60 mA的输出电流且最小压差只有100 mV。测试同时验证了所设计LDO的负载和瞬态响应都得到改善:负载调整率为0.054 mV/mA,线性调整率为0.014%,而芯片面积约为0.094 mm2,因此特别适用于高精度、便携式片上电源系统。
A kind of 0. 13 um BiCMOS low dropout regulator was designed, including BiCMOS error amplifier, BiCMOS band-gap reference with soft-start circuit and cascode compensation. A dynamic bias-current circuit located in the preceding stage of BiCMOS error amplifier was used to improve the transient response. Because its low temperature sensitivity, the proposed BiCMOS band-gap reference could supply high precision reference voltage for LDO. The designed LDO was taped out and tested. The results show that the designed LDO is capable of providing 60 mA of output current with a minimum dropout voltage of 100 mV. Meanwhile, both the load transient respond and line transient respond are improved, the LDO has a load regulation of 0. 054 mV/mA, a line regulation of 0. 014% , and the active chip area is about 0. 094 mm2. With these characteristics, the designed LDO is very suitable for high precision and portable on-chip power supply systems.
出处
《半导体技术》
CAS
CSCD
北大核心
2012年第2期110-113,121,共5页
Semiconductor Technology
基金
国家自然科学基金资助项目(61104016)
