摘要
最近，选用Ｎ 型体材料碲镉汞（Ｈｇ１－ ｘＣｄｘＴｅ） 作衬底，成功制备了平面ＰｏｎＮ 结构的光电二极管。文中报道了制备各个波段ＰｏｎＮ 结的一些进展。碲镉汞平面ＰｏｎＮ 结采用砷掺杂在Ｎ 型衬底上形成Ｐ区，砷掺杂由砷离子注入加上退火扩散形成。对ＰｏｎＮ 二极管的电流电压关系温度特性的研究表明：直到１４０Ｋ，长波（λｃ ＝ ９ ．１μｍ）ＰｏｎＮ 结的暗电流以扩散电流为主。制备了从中波到长波各个波段的碲镉汞ＰｏｎＮ 结构红外探测器。目前，对于λｃ ＝ ５ ．２μｍ 的器件，Ｒ０ Ａ 值达到６８Ωｃｍ２ ，黑体探测率Ｄ＊ｂｂ（５００Ｋ） 可达２ ×１０１０ｃｍ Ｈｚ１／２／ Ｗ；对于λｃ ＝ １４ ．５μｍ 的器件，Ｒ０ Ａ 值达到０－２Ωｃｍ２ ，黑体探测率Ｄ＊ｂｂ（５００Ｋ） 可达１ ×１０９ｃｍ Ｈｚ１／２／ Ｗ。
The planar P\|on\|N Hg\-\{1- x \}Cd\- x Te photodiodes were fabricated sucessfully on N\|type bulk substrates. Some new results of an expanded range of infrared operation are presented in this paper. The P\|on\|N planar devices consist of an arsenic\|doped P\|type layer atop a N\|type bulk substrate. The planar junctions were formed by selective pocket diffusion of arsenic deposited on the surface by ion implantation. Detailed analysis of the current\|voltage characteristics of these diodes (λ\-c=9.1μm) as a function of temperature shows that their dark currents are diffusion\|limited down to 140K. The R \-0 A products of 68Ωcm\+2 were obtained at 80K with cut\|off wavelength of 5.2μm, and its blackbody detectivity D \+*\-\{bb\}(500K) was greater than 2×10\+\{10\}cmHz\+\{1/2\}/W. Here the results of a P\|on\|N photodiode with cut\|off wavelength at VLWIR (14.5μm) were also presented, and its blackbody detectivity D \+*\-\{bb\}(500K) was greater than 1×10\+9cmHz\+\{1/2\}/W.
出处
《红外与激光工程》
EI
CSCD
1999年第6期61-63,共3页
Infrared and Laser Engineering
基金
国家自然科学基金
