摘要
Selected area laser-crystallized polycrystalline silicon （p-Si） thin films were prepared by the third harmonics （355 nm wavelength） generated by a solid-state pulsed Nd：YAG laser. Surface morphologies of 400 nm thick films after laser irradiation were analyzed. Raman spectra show that film crystallinity is improved with in- crease of laser energy. The optimum laser energy density is sensitive to the film thickness. The laser energy density for efficiently crystallizing amorphous silicon films is between 440-634 mJ/cm^2 for 300 nm thick films and between 777-993 mJ/cm^2 for 400 nm thick films. The optimized laser energy density is 634, 975 and 1571 mJ/cm^2 for 300, 400 and 500 nm thick films, respectively.
Selected area laser-crystallized polycrystalline silicon （p-Si） thin films were prepared by the third harmonics （355 nm wavelength） generated by a solid-state pulsed Nd：YAG laser. Surface morphologies of 400 nm thick films after laser irradiation were analyzed. Raman spectra show that film crystallinity is improved with in- crease of laser energy. The optimum laser energy density is sensitive to the film thickness. The laser energy density for efficiently crystallizing amorphous silicon films is between 440-634 mJ/cm^2 for 300 nm thick films and between 777-993 mJ/cm^2 for 400 nm thick films. The optimized laser energy density is 634, 975 and 1571 mJ/cm^2 for 300, 400 and 500 nm thick films, respectively.
基金
Project supported by the National Natural Science Foundation of China(Nos.50802118,60906005)
the Natural Science Foundation of Guangdong Province,China(No.9451027501002848)
