摘要
基于LSS理论,本文用蒙特卡洛法模拟计算了不同能量的硼、磷离子注入非晶硅靶及多层靶中的射程和能量淀积分布。对于多层、多原子靶,利用概率分布和比例函数使它转换成普通靶材料的计算。计算结果与LSS理论及IBM公司J. P. Biersack等人1985年的计算结果基本相符。对于高斯型分布的微细离子柬注入,对其径向坐标的随机抽样作了模拟分析,结果表明横向分布与束半径密切相关,并且横向能量淀积的峰值位置就在束半径附近。
In this paper, the ion range and energy deposition distribution of the energetic ions in the amorphous Si-target are calculated with Monte-Carlo simulation based on the LSS theory. The calculated results are close to the results of the LSS. theory and Biersack's work in 1985. For the FIB implantation, a two dimension normal distribution in the amorphous Si-target by a random sampling of the ion position is also presented. The results show that the transverse profile is correlative with the ion beam radius, and the top position of the energy deposition distribution is near the ion beam radius.
出处
《真空科学与技术学报》
EI
CAS
CSCD
1990年第3期189-194,共6页
Chinese Journal of Vacuum Science and Technology
