摘要
栅长短于0.2μm的砷化镓(GaAs)金属一半导体场效应晶体管已被我们研制成功。电子束光刻、金属剥离(lift-off)和双层及三层电子束光刻胶等先进技术的应用,获得了亚微米的T型栅,从而改进了场效应管的高频特性。直流测试显示,这种场效应管的跨导高达135ms/mm。
GaAs MESFET' s with gate lengths shorter than 0.2μm have been fabricated - Electron beam lithography defines the very short gates . MBE -grown layers material and lift- off technique were used . DC measurements yielded transconductances up to 135 ms /mm . Double layer and trilayer resists were used to fabricate T - shaped gates in order to improve high frequency properties .
出处
《北京理工大学学报》
EI
CAS
CSCD
1990年第S1期107-112,共6页
Transactions of Beijing Institute of Technology
关键词
场效应晶体管/金属半导体场效应晶体管
亚微米栅长
field effect transistor / metal - semiconduetor field effect transistor , Submicron gate length .
