A PHOTOELECTROCHEMICAL INVESTIGATION OF LATTICE-MATCHED SQW GaAs/Al_xGa_(1_x)As ELECTRODE

A PHOTOELECTROCHEMICAL INVESTIGATION OF LATTICE-MATCHED SQW GaAs/Al_xGa_(1_x)As ELECTRODE

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摘要 Single quantum wells(SQWs)of GaAs/Al_xGa_(1-x)As have been investigated as photoelectrodes in photoelectrochemical cells.Structured photocurrent spectra for well widths of 50 and 100 SQWs were obtained in nonaqueous solution.The dependence of structured photocurrent spectra on electrode potential were exhibited.The quantum yield was higher in SQW with 100 well compared to 50 well. Single quantum wells(SQWs)of GaAs/Al_xGa_(1-x)As have been investigated as photoelectrodes in photoelectrochemical cells.Structured photocurrent spectra for well widths of 50 and 100 SQWs were obtained in nonaqueous solution.The dependence of structured photocurrent spectra on electrode potential were exhibited.The quantum yield was higher in SQW with 100 well compared to 50 well.

作者 Yao LIU Yuan LIN Xue Ping LI Xu Rui XIAO The Center of Photoelectrochemistry,Instisute of Photographic Chemistry Academia Sinica,Beijing 100101Chun Hui YAN Yi Ping ZENG Dian Zhao SUN Hai Qun ZHENG Hong Xi GUO Institute of Semiconductors,Academia Sinica,Beijing 100083

出处《Chinese Chemical Letters》 SCIE CAS CSCD 1993年第9期813-814,共2页 中国化学快报（英文版）

基金 This work was supported by the National Natural Science Foundation of China.

关键词 GAAS well A PHOTOELECTROCHEMICAL INVESTIGATION OF LATTICE-MATCHED SQW GaAs/Al_xGa x)As ELECTRODE AL

分类号 O6 [理学—化学]

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Chinese Chemical Letters

1993年第9期

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A PHOTOELECTROCHEMICAL INVESTIGATION OF LATTICE-MATCHED SQW GaAs/Al_xGa_(1_x)As ELECTRODE

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