摘要
The electrical conductivity of LPCVD polysilicon doped with oxygen atoms(acromymSIPOS)films has been measured to study the electrical properties of SIPOS.The results showthat the electrical properties of SIPOS depend on both oxygen contents and annealing processes.The electrical conductivity decreases while the oxygen content in SIPOS increases.The temper-.ature dependence of the electrical conductivity of SIPOS during annealing shows that there aretwo kinds of conduction mechanisms,that is,conductivities of SIPOS are concerned in the reac-tion of Si-O bonds and the recrystallization of SIPOS during low temperature500℃)and hightemperature900℃)annealing,respectively.In addition,the doping effect on the conductivityof SIPOS has been studied.It has been observed that doping made the increase of conductivityin SIPOS,but the oxygen contents apparently suppressed the increase of conductivity in doped-SIPOS.
The electrical conductivity of LPCVD polysilicon doped with oxygen atoms(acromym SIPOS)films has been measured to study the electrical properties of SIPOS.The results show that the electrical properties of SIPOS depend on both oxygen contents and annealing processes. The electrical conductivity decreases while the oxygen content in SIPOS increases.The temper-. ature dependence of the electrical conductivity of SIPOS during annealing shows that there are two kinds of conduction mechanisms,that is,conductivities of SIPOS are concerned in the reac- tion of Si-O bonds and the recrystallization of SIPOS during low temperature500℃)and high temperature900
annealing,respectively.In addition,the doping effect on the conductivity of SIPOS has been studied.It has been observed that doping made the increase of conductivity in SIPOS,but the oxygen contents apparently suppressed the increase of conductivity in doped- SIPOS.
