摘要
Highly oriented MgO(111)and MgO(100)thin films have been deposited on Si(111)and Si(100)substrates by using Low Pressure MOCVD(LPMOCVD).Magnesium 2,4-pentanedionate was used as the source ma- terial.The films have a very smooth surface morphology and optical transparency with an index of refraction of 1.71(632.8 nm).Typical growth rate of the films is 1.0 μm/h.The data of X-ray diffraction analysis indi- cate that the films are fully textured with(111)and(100)orientation perpendicular to the substrate surface respectively.The main parameters having influence on the deposition are the substrate temperature,the total pressure in the reaction chamber,the reaction gases and its flowrate.
Highly oriented MgO(111)and MgO(100)thin films have been deposited on Si(111)and Si(100)substrates by using Low Pressure MOCVD(LPMOCVD).Magnesium 2,4-pentanedionate was used as the source ma- terial.The films have a very smooth surface morphology and optical transparency with an index of refraction of 1.71(632.8 nm).Typical growth rate of the films is 1.0 μm/h.The data of X-ray diffraction analysis indi- cate that the films are fully textured with(111)and(100)orientation perpendicular to the substrate surface respectively.The main parameters having influence on the deposition are the substrate temperature,the total pressure in the reaction chamber,the reaction gases and its flowrate.
