摘要
本文报导了任意铝组分的AlGaAs材料的MOCVD外延生长和控制,解决了MOCVD生长高铝组分AIGaAs这一难题。国内首次运用MOCVD技术生长出高反射率的适合于垂直腔面发射激光器的AlGaAs-GaAs四分之一波长的分布布拉格反射镜(DBR)结构。用高分辨透射电镜观察得出,该DBR有良好的周期性、厚度均匀和界面平直。测得其反射率为94％,响应波长为820nm-868nm。
In this paper it is reported that high quality AlxGa1-xAs with x = 0 to 1 were grown and controlled. The key problems of high quality AlGaAs with higher Al mole fraction grown by MOCVD were resolved. Therefore, 1/4-wavelength distributed Bragg reflectors (DBRs) structure with 20. 5 pairs of Ga0.3Al0.7As(69. 3nm)-GaAs(60. 6nm) were grown on GaAs (001) substrate at 700 ℃ by MOCVD for application of verticalcavity surface-emitting lasers (VCSELs). The TEM micrography of cross-section indicated the DBRs had good periodic structure, uniformity of thickness and composition and quality of interfaces. The reflectivities of the DBRs were measured at room temperature, and the best one was 94% at reflective wavelengths from 820nm to 868nm.
出处
《应用基础与工程科学学报》
EI
CSCD
1994年第4期288-292,共5页
Journal of Basic Science and Engineering
