摘要
给出一个利用观测的ＴＥＣ和电离图参数来推导顶部电离层电子密度剖面的方法．基本原理是，利用反演的峰下剖面计算出峰下积分电子含量，然后由观测的ＴＥＣ推算出顶部的积分电子含量。假定ＩＲＩ计算的顶部剖面经一个修正标高因子修正后所得的积分电子含量与观测值一致，从而得到修正标高因子。
A method is presented in this paper for deducing the topside ionospheric electron concentration profile from THC measurements and ionograms obtained by ionosonds, in which the calculated profile by IRI─90 is corrected by a supposed scale height to fit the actual topside profile. Such a correcting scale height is obtained by forcing the integration of the corrected topside profile equal to the measured topside electron content, which is obtained with measured TEC eliminating the sub-peak electron content, an integration of the sub-peak electron concentration profile deduced from ionograms.
出处
《地球物理学报》
SCIE
EI
CAS
CSCD
北大核心
1996年第S1期18-26,共9页
Chinese Journal of Geophysics
关键词
顶部电离层
电子密度剖面
国际参考电离层
总电子含量
Topside ionosphere, Electron concentration profile, International reference ionosphere, Total electron content.
