摘要
GaN powder of nanometer scale was prepared by metal organic chemical vapor deposition using diethylgallium azide as precursor. The resulting powder was characterized by XRD and TEM. It has been found that the particle size of the powder obtained is affected by the deposition temperature, and the fine crystals formed in temperature range 500 similar to 650 degrees C were hexagonal.
GaN powder of nanometer scale was prepared by metal organic chemical vapor deposition using diethylgallium azide as precursor. The resulting powder was characterized by XRD and TEM. It has been found that the particle size of the powder obtained is affected by the deposition temperature, and the fine crystals formed in temperature range 500 similar to 650 degrees C were hexagonal.
