摘要
磨料是化学机械抛光(CMP)中重要的组成部分,是决定抛光平坦化的重要影响因素。采用两步法制备了新型的氧化硅包覆聚苯乙烯(PS)核壳型复合磨料,采用扫描电子显微镜(SEM)、透射电子显微镜(TEM),X射线能量色散谱(EDX)等对复合磨料进行了表征。结果表明所制备的复合磨料具有核壳结构,且表面光滑。随后复合磨料对比硅溶胶对铜化学机械抛光进行研究,采用原子力显微镜(AFM)观测表面的微观形貌,并测量了表面粗糙度。经过复合磨料抛光后的铜片粗糙度为0.58nm,抛光速率为40nm/min。硅溶胶抛光后的铜片的粗糙度是1.95nm,抛光速率是37nm/min。
Abrasive is an important component of the chemical mechanical polishing （CMP） system. It is an important factor that determines the planarization in CMP. Novel silica coated polystyrene （PS） core - shell composite abrasives were prepared via a two - step process. The composite abrasives were characterized by Scanning Electron Microscope （SEM）, Transmission Electron Microscope （TEM） and Energy Dispersive X -ray Analysis （EDX）. The results indicate that composite abrasive has a core -shell structure and smooth surface. The chemical mechanical polishing （CMP） performances of the composite abrasive and colloidal silica on blanket copper wafers were investigated. The copper surfaces were characterized by Atomic force microscopy （AFM）. The results show that the average roughness of the polished copper is 0.58nm for composite abrasive and the removal rate is 40nm/min. The average roughness of the polished copper is 1.95nm for colloidal silica and the removal rate is 37nm/min.
出处
《功能材料与器件学报》
CAS
CSCD
北大核心
2011年第5期520-525,共6页
Journal of Functional Materials and Devices
基金
国家集成电路重大专项(2011ZX02704-002
2009ZX02030-001)
上海市科委(0952nm00200)
中国科学院外国专家特聘研究员计划的支持
