摘要
以甲基三氯硅烷为原料,FeCl3或Ni(NO3)2为催化剂,采用催化化学气相沉积工艺,在C/C-SiC复合材料表面原位制备出SiC晶须;研究了温度、催化剂对制备SiC晶须的影响。结果表明:1 050℃为制备SiC晶须的最佳温度;FeCl3催化生长的SiC晶须较细,直径为1.5～1.8μm,晶须表面光滑,直晶率高;Ni(NO3)2催化制备的SiC晶须较粗,直径为2.0～2.5μm,晶须表面粗糙,晶须交互生长,弯晶率高;晶须生长机理为气液固(VLS)机理。
Taking methyl trichlorosilane as raw material, FeCla or Ni （NO3）2 as catalyst, the SiC whiskers were prepared on C/C-SiC composite surface by catalytic chemical vapor deposition process. The influences of temperature and catalyst on preparation of SiC whiskers were studied. The results show that 1 050℃ was the optimum temperature to preparation whisker. The surface of the whisker was smooth, the diameter was 1.5-- 1.8 μm, and straight whiskers ratio was high when the catalyst was FeCl3 solution. While the surface of the whisker was rough, the diameter was 2.0--2. 5μm, and curving whiskers ratio was high when the catalyst was Ni（NO3）2 solution. The SiC whiskers grew via vapor-liquid solid （VLS） mechanism.
出处
《机械工程材料》
CAS
CSCD
北大核心
2011年第10期98-102,共5页
Materials For Mechanical Engineering
