摘要
自旋电子学由于其丰富的物理内涵和广泛的应用前景受到学术界和工业界的高度重视,成为近年来凝聚态物理和信息技术领域关注的焦点。本文介绍了利用磁性金属纳米结构实现作为自旋电子器件基础的自旋注入的方法,特别涉及利用铁磁金属纳米点接触结构钉扎磁畴的特点,研究自旋极化电流与磁畴壁的相互作用规律,理解纳米结构中畴壁的动力学行为,并以此为基础构筑结构简单、性能优异的全金属磁逻辑电路,从而实现了由电信号驱动,通过电信号检测,并与CMOS技术兼容的目的。
Spintronic devices often include low power dissipation, nonvolatile data retention and high integration densities. In the last decade, many researchers have been concentrating on the new technology of spintronic devices. In this paper, the interactions between the magnetic domain wall pinned in nanostructure of ferromagnetic metal and spin polarized electron were introduced. Based on the phenomena that the domain wall in ferromagnetic materials could be driven by the electric current, the all metallic logical gates can be fabricated by nanocontacts using nanofabrication technology, then the information could be written in and read out by current.
出处
《物理学进展》
CSCD
北大核心
2011年第3期185-197,共13页
Progress In Physics
基金
国家自然科学基金(批准号:50825206
60871045
10834012)
科技部国家重大科学研究计划(批准号:2009CB930502)
