摘要
为了精确的测量超大规模集成电路芯片表面的温度,监控电路工作状态和进行过热保护,采用一种新型CMOS片上温度传感器结构。首先利用两个衬底PNP管的基-射电压差ΔVBE的PTAT特性来感测温度,然后利用偏置电路镜像过来的PTAT电流来控制一个三阶的环型振荡器,产生频率与温度成正比的振荡信号,再利用测频电路转化为8位数字。利用0.13μm CMOS工艺设计,版图面积仅为0.02 mm2。功耗为0.3μW(100 sample/S)。后版图仿真结果显示,在-60℃到160℃温度范围内的测量精度为±3.5℃(校准后)。该电路具有低功耗、高精度和芯片面积小等优点。该电路将用于WiMAX/LTE收发信机芯片上,对芯片表面温度进行监控。
In order to measure the temperature of the VLSI chip surface accurately,monitor the circuit work state and protect from over-heating,a new circuit configuration has been adopted to design the temperature sensor in this work.Firstly,the difference between the base-emitter voltage ΔVBE of two bipolar transistors has a PTAT characteristics and such a characteristics can be used to measure the temperature.Secondly,the PTAT current from the bias circuit image can be used to control the three-order ring oscillator,so that an oscillating signal with the frequency in proportional to the temperature is generated.Finally,a digital circuit is used to measure the frequency and 8 bit digital data which represents the temperature.The sensor is designed by TSMC 0.13 μm CMOS process.The layout area is only 0.02 mm2.The power consumption is 0.3 μW（100 sample/S）.The post-layout simulation result shows that the measure precision is ±3.5 ℃（after calibration）in the temperature range from-60 ℃ to 160 ℃.This temperature sensor has the merits of：low power,high precision and small layout area.The circuit will be used on the WiMAX/LTE Transceiver to measure the on-chip temperature.
出处
《传感技术学报》
CAS
CSCD
北大核心
2011年第7期981-985,共5页
Chinese Journal of Sensors and Actuators
基金
国家高技术研究发展计划(863计划)项目(2009AA01Z260)
广东省科技计划项目(2009A010100004)
