摘要
The influence of the width of a lattice-matched A10.82In0.18N/GaN single quantum well （SQW） on the absorption coefficients and wavelength of the intersubband transition （ISBT） has been investigated by solving the Schr5dinger and Poisson equations self-consistently. The wavelength of 1-2 ISBT increases with L, the thickness of the single quantum well, ranging from 2.88 ~m to 3.59 ~.m. The absorption coefficients of 1-2 ISBT increase with L at first and then decrease with L, with a maximum when L is equal to 2.6 nm. The wavelength of 1-3 ISBT decreases with L at first and then increases with L, with a minimum when L is equal to 4 nm, ranging from approximately 2.03 p^m to near 2.11 p.m. The absorption coefficients of 1-3 ISBT decrease with L. The results indicate that mid-infrared can be realized by the A10.s2In0.1sN/GaN SQW. In addition, the wavelength and absorption coefficients of ISBT can be adjusted by changing the width of the SQW.
The influence of the width of a lattice-matched A10.82In0.18N/GaN single quantum well （SQW） on the absorption coefficients and wavelength of the intersubband transition （ISBT） has been investigated by solving the Schr5dinger and Poisson equations self-consistently. The wavelength of 1-2 ISBT increases with L, the thickness of the single quantum well, ranging from 2.88 ~m to 3.59 ~.m. The absorption coefficients of 1-2 ISBT increase with L at first and then decrease with L, with a maximum when L is equal to 2.6 nm. The wavelength of 1-3 ISBT decreases with L at first and then increases with L, with a minimum when L is equal to 4 nm, ranging from approximately 2.03 p^m to near 2.11 p.m. The absorption coefficients of 1-3 ISBT decrease with L. The results indicate that mid-infrared can be realized by the A10.s2In0.1sN/GaN SQW. In addition, the wavelength and absorption coefficients of ISBT can be adjusted by changing the width of the SQW.
基金
Project supported by the National High Technology Research and Development Program of China (Grant No.2007AA03Z403)
the National Natural Science Foundation of China (Grant Nos.61076013 and 60776042)
the National Basic Research Program of China (Grant No.2006CB921607)
