摘要
GaAs单片集成电路具有体积小、质量轻和可靠性高等特性,已经成为微波领域重要的器件。采用MBE技术生长出双面掺杂AlGaAs/InGaAs PHEMT结构的外延材料,研制了高效率的GaAs PHEMT器件,S波段功率附加效率大于55%。建立了基于EEHEMT的大信号模型,利用ADS软件搭建了有耗匹配的二级放大电路拓扑结构,进行最佳效率匹配,得到优化电路。采用4英寸（1英寸=2.54cm）GaAs0.35μm标准工艺研制了AlGaAs/InGaAs/GaAsPHEMT MMIC电路,测试结果表明,在测试频率为2.2~3.4GHz,测试电压VDS为10V时,输出功率大于12W,功率增益大于22dB,功率附加效率大于40%。
The GaAs MMIC has become an important microwave device because of small dimension,light quanlity and high reliability.The dual delta-doped AlGaAs/InGaAs epitaxial material was obtained by MBE technology.A high efficiency GaAs pseudomorphic high-electron mobility transistor（PHEMT） with the power added efficiency（PAE）of more than 55% at S-band was fabricated.An accurate large-signal model was established based on EEHEMT model,a 2-stage amplifier was designed using loss matched circuit technique by Adanved Design Software（ADS）and optimized with efficiency matching method.The AlGaAs/InGaAs/GaAs PHEMT MMIC was fabricated with the 4-inch（1 inch=2.54 cm） 0.35 μm standard GaAs process.And the test results show that the circuit has the output power of over 12 W,power gain of over 22 dB,power added efficiency of over 40% with the test frequency of 2.2-3.4 GHz and test voltage VDS of 10 V.
出处
《微纳电子技术》
CAS
北大核心
2011年第8期489-493,共5页
Micronanoelectronic Technology
