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Ⅳ族元素掺杂的α-Fe的第一性原理研究 被引量:1

First-principles Study of α-Fe Doped With Group-Ⅳ Elements
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摘要 采用基于自旋极化的密度泛函理论的第一性原理方法,使用超原胞模型对Ⅳ族元素掺杂的α-Fe体系α-Fe:X(X=C,Si,Ge)的电子结构和磁学性质进行了系统研究.计算得到了α-Fe体系掺杂前后的能带结构、电子态密度及电荷密度分布等.对计算结果的分析表明:C、Si元素的替位使原胞的体积有所减小,而Ge的替位则导致原胞体积的增大;C和Ge的替位使得电荷密度分布的方向性增强,预示着C和Ge与周围原子相互作用有比较明显的共价性,而Si的替位却对周围电荷密度的影响很小;掺杂时,各替位原子本身基本上都没有表现出磁性,而各Fe原子都保持有磁性,其磁矩都比纯α-Fe中的Fe原子略大. The electronic and magnetic properties of α-Fe doped with group-Ⅳ elements(C,Si,Ge) have been studied by employing the first-principles method based on the spin-polarized density functional theory.The band structures,density of states and electronic charge densities were calculated for both the pure α-Fe and the doped systems α-Fe:X(X= C,Si,Ge).The calculated results showed that:1) the substitution of Fe atom with C or Si leaded to a unit cell volume reduction.The substitution with Ge,on the contrary,leaded to volume expansion;2) the substitution with C or Ge atoms made the charge density distribution more directional around the substitution atoms,suggesting a more remarkable covalent interaction between the corresponding atoms.On the other hand,the substitution with Si atom showed little change on the electronic charge density;3) for the systems with substitution atoms α-Fe:X(X= C,Si,Ge),the substitution atoms themselves did not show magnetism,however,all the Fe atoms gave magnetic moments which are slightly larger than that of Fe atoms in the pure α-Fe.
出处 《厦门大学学报(自然科学版)》 CAS CSCD 北大核心 2011年第4期674-679,共6页 Journal of Xiamen University:Natural Science
基金 国家自然科学基金项目(10774124)
关键词 Α-FE 掺杂 电子结构 从头计算 α-Fe doping electronic structure ab initio
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