摘要
设计的MEMS高g加速度传感器抗高过载能力差,将导致在冲击等恶劣环境中应用时结构易破坏。通过分析传感器结构对其抗过载能力的影响,及在高冲击测试中传感器结构损坏情况的统计,提出了一种新颖的优化高g加速度传感器抗高过载能力的方法。该方法是在结构最易断裂的梁根部和端部添加倒角,以分散在冲击作用下传感器结构这些部位受到的应力,进而提高加速度传感器的高过载能力,并从理论仿真分析了该方法的可行性。最后利用Hopkinson杆测试方法对优化前后的加速度传感器进行冲击测试,测试结果表明,加速度计的抗高过载能力从180 000 g提高到240000 g,说明该优化方法显著,明显提高了该类加速度传感器的抗高过载能力,设计的加速度传感器达到了较理想的抗高过载能力。
The structure to be measured is easy to destroy if a designed MEMS high-g acceleration sensor has less-overload ability and it is used in harsh impact environment.Through analyzing the effect of a sensor structure on its anti-overload capacity and collecting its structural damage statistics in high impact testing,a new method was put forward,it could optimize the overload-resistant ability of a high-g acceleration sensor.With this method,chamfers were added at root and end of a beam being the part most easily to be broken in a sensor structure in order to disperse the stress of such areas.When impact loads were exerted on a sensor structure,it could increase the high-overload-resistant ability.The feasibility of the method was analyzed with theoretical simulations.Then,sensors were tested with Hopkinson bar impact test method.The test result indicated that the high-overload-resistant capacity of an accelerometer optimized can be raised from 180,000g to 240,000g.It was shown that the proposed method can notablly increase the high-overload-resistane ability of a MENS high-g accelerameter.
出处
《振动与冲击》
EI
CSCD
北大核心
2011年第7期271-274,共4页
Journal of Vibration and Shock
基金
山西省青年学术带头人资助
新世纪优秀人才支持计划资助
