摘要
The light extraction efficiencies have been calculated for various InGaN/GaN multiple quantum well nanostructure light-emitting diodes including nanopillar, nanorough of P-CaN surface, coreshell and nano-interlayer structure. From the calculated results we can see that the light extraction efficiency is remarkably improved in the nanostructures, especially those with an InGaN or AlCaN nano-interlayer. With a 420-nm luminescence wavelength, the light extraction efficiency can reach as high as 65% for the InGaN or AlGaN nano-interlayer structure with appropriate In or Al content while only 26% for the planar structure.
The light extraction efficiencies have been calculated for various InGaN/GaN multiple quantum well nanostructure light-emitting diodes including nanopillar, nanorough of P-CaN surface, coreshell and nano-interlayer structure. From the calculated results we can see that the light extraction efficiency is remarkably improved in the nanostructures, especially those with an InGaN or AlCaN nano-interlayer. With a 420-nm luminescence wavelength, the light extraction efficiency can reach as high as 65% for the InGaN or AlGaN nano-interlayer structure with appropriate In or Al content while only 26% for the planar structure.
基金
Project supported by the National Science Fund for Distinguished Young Scholars of China (Grant No.60925017)
the National Natural Science Foundation of China (Grant Nos.10990100 and 60836003)
the National Basic Research Program of China (Grant No.2007CB936700)
the National High Technology Research and Development Program of China (Grant No.2007AA03Z401)
the Knowledge Innovation Program of the Chinese Academy of Sciences (Grant No.ISCAS2009T05O9S4050000)
