摘要
We investigate the amplified spontaneous emission （ASE） from an Ag-backed poly[2-methoxy-5-（2＇-ethylhexyloxy）- 1,4-phenylenevinylene] （MEH-PPV） film with different film thicknesses. The ASE characteristics of Ag-backed MEH- PPV films with different thicknesses show that increasing the film thickness can reduce the influence of the Ag cladding. The threshold, the gain, and the loss of the device with a thickness of 170 nm are comparable to those of a metal-free device. The lasing threshold of this device is about 7.5 times that of a metal-free device. Our findings demonstrate that Ag-backed MEH-PPV film with an appropriate thickness can still be a good polymer gain material for the fabrication of solid-state lasers.
We investigate the amplified spontaneous emission （ASE） from an Ag-backed poly[2-methoxy-5-（2＇-ethylhexyloxy）- 1,4-phenylenevinylene] （MEH-PPV） film with different film thicknesses. The ASE characteristics of Ag-backed MEH- PPV films with different thicknesses show that increasing the film thickness can reduce the influence of the Ag cladding. The threshold, the gain, and the loss of the device with a thickness of 170 nm are comparable to those of a metal-free device. The lasing threshold of this device is about 7.5 times that of a metal-free device. Our findings demonstrate that Ag-backed MEH-PPV film with an appropriate thickness can still be a good polymer gain material for the fabrication of solid-state lasers.
基金
Project supported by the National Natural Science Foundation of China (Grant Nos.60978061,60777026,60677007,and 60825407)
the Program for New Century Excellent Talents in University of China (Grant No.NCET-08-0717)
the Beijing Municipal Science and Technology Commission of China (Grant Nos.Z090803044009001 and 4102046)
the Program of Introducing Talents of Discipline to Universities,China (Grant No.B08002)
