摘要
用溶胶－ 凝胶法制备了ＰＺＴ压电薄膜，研制了Ａｕ／ＰＺＴ／ＰＴ／ＴｉＯ２／ＮｉＴｉ／Ｓｉ（１００） 多层膜结构，用ＸＲＤ、ＡＦＭ、ＴＥＭ－ ＥＤＸ和ＳＡＤ 技术考察了薄膜的表面形貌、相结构演化、以及剖面的元素分布特性。结果表明：ＰＺＴ膜与ＮｉＴｉ 合金膜的结合良好、稳定；ＰＴ层的引入，使无定型ＰＺＴ薄膜在５５０℃退火后，转变为钙钛矿结构，降低了晶化温度，并有效地抑制焦碌石相的形成；ＮｉＴｉ 薄膜结晶良好；ＴｉＯ２ 过渡层显著改善了ＰＺＴ膜与ＮｉＴｉ 合金膜的结合性能；多层结构界面Ｎｉ 元素的扩散明显。介电、铁电性能测试结果表明ＰＺＴ薄膜仍保持了较高的介电常数、低损耗、低漏电流密度，ＰＺＴ－ ＮｉＴｉ 结构呈现电滞回线。ＰＺＴ与ＮｉＴｉ 的复合在工艺和性能上是可以兼容的。
The Pb(Zr,Ti)O 3(PZT) thin film was fabricated by sol-gel technique to form Au/PZT/PT/TiO 2/NiTi/Si(100) structure. The surface morphology phase structure evolution, and the element profiles were examined by using AFM, XRD, TEM-EDX and SAD methods. Results of experiments showed that PZT thin film was well connected with NiTi film; the crystallization temperature of the PZT was reduced by introducing PT layer; both PZT and NiTi were well crystallized; the amorphous PZT thin film transited to the perovskite phase after annealing at 550℃ for 30 min, the formation of pyrochlore phase was effectively retarded; the lattice matching was improved by TiO 2 layer; the interdiffusion of mickel in the multilayer was revealed. The measurement results indicated that the PZT thin film in the Au/PZT/PT/TiO 2/NiTi/Si(100) multilayer retained high dielectric constant, low dissipation factor, low leak current density and ferroelectric hystersis loop, showing its compatibility with NiTi film in processing and properties.
出处
《功能材料与器件学报》
CAS
CSCD
1999年第4期255-261,共7页
Journal of Functional Materials and Devices
基金
上海市重点自然科学基金
上海市科委青年基金
国家教育部"薄膜与微细技术"开放研究实验室资助
关键词
PZT-NiTi
多层膜
合成
微结构
介电
铁电性能
Multilayer thin films of PZT-NiTi, Combination, Microstructure, Dielectric and ferroelectric properties.
