摘要
A radiation-hardened SRAM-based field programmable gate array VS1000 is designed and fabricated with a 0.5μm partial-depletion silicon-on-insulator logic process at the CETC 58th Institute.The new logic cell （LC）,with a multi-mode based on 3-input look-up-table（LUT）,increases logic density about 12%compared to a traditional 4-input LUT.The logic block（LB）,consisting of 2 LCs,can be used in two functional modes：LUT mode and distributed read access memory mode.The hierarchical routing channel block and switch block can significantly improve the flexibility and routability of the routing resource.The VS1000 uses a CQFP208 package and contains 392 reconfigurable LCs,112 reconfigurable user I/Os and IEEE 1149.1 compatible with boundary-scan logic for testing and programming.The function test results indicate that the hardware and software cooperate successfully and the VS1000 works correctly.Moreover,the radiation test results indicate that the VS1000 chip has total dose tolerance of 100 krad（Si）,a dose rate survivability of 1.5×10^（11）rad（Si）/s and a neutron fluence immunity of 1×10^（14） n/cm^2.
A radiation-hardened SRAM-based field programmable gate array VS1000 is designed and fabricated with a 0.5μm partial-depletion silicon-on-insulator logic process at the CETC 58th Institute.The new logic cell （LC）,with a multi-mode based on 3-input look-up-table（LUT）,increases logic density about 12%compared to a traditional 4-input LUT.The logic block（LB）,consisting of 2 LCs,can be used in two functional modes：LUT mode and distributed read access memory mode.The hierarchical routing channel block and switch block can significantly improve the flexibility and routability of the routing resource.The VS1000 uses a CQFP208 package and contains 392 reconfigurable LCs,112 reconfigurable user I/Os and IEEE 1149.1 compatible with boundary-scan logic for testing and programming.The function test results indicate that the hardware and software cooperate successfully and the VS1000 works correctly.Moreover,the radiation test results indicate that the VS1000 chip has total dose tolerance of 100 krad（Si）,a dose rate survivability of 1.5×10^（11）rad（Si）/s and a neutron fluence immunity of 1×10^（14） n/cm^2.
