摘要
研究了广泛应用于垂直腔面发射激光器(VCSEL)等Ⅲ-Ⅴ族光电子器件制作的侧向腐蚀技术。分别采用C_6H_8O_7:H_2O_2溶液、HCl:H_3PO_4溶液对InAlAs材料、InP材料进行了侧向腐蚀试验,获得了较稳定的速率,并对其腐蚀机制和晶向选择性进行了分析。采用侧向腐蚀技术制备了电流限制孔径分别为11μm和5μm的1.3μm垂直腔面发射激光器,器件在室温下均连续激射。
Lateral etching technology which is widely used in vertical-cavity surface-emitting lasers（VCSELs） and other Ⅲ-Ⅴ optoelectronic devices is studied. InA1As and InP are lateral etched using C6H8O7 ： H2O2 solutions and HCl：H3PO4 solutions with stable etching rates respectively. The etching mechanism and crystal orientation selectivity are analyzed. With the current eonfinement apertures of 11 μm and 5 μm formed by Lateral etching, 1.3 μm vertical-cavity surface-emitting lasers are achieved, which exhibit continuous-wave operation under room-temperature.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
2011年第3期305-309,共5页
Research & Progress of SSE
基金
国家"973"计划资助项目(2003CB314903)
关键词
侧向腐蚀
电流限制孔径
垂直腔面发射激光器
lateral etching
current confinement aperture
vertical-cavity surface-emitting laser
