摘要
采用射频磁控溅射法制备了不同Co掺杂浓度的SiC薄膜。X射线衍射(XRD)、X射线光电子能谱(XPS)、Hall以及电阻率-温度(-ρT)曲线测试结果表明,Co掺杂SiC薄膜具有4H-SiC(100)晶体结构和典型的半导体导电特征,未发现Co金属团簇以及其它CoSi第二相化合物生成,显示了Co原子以替位掺杂的形式进入了SiC晶格;电流-电压(I-V)特性测试发现,Co掺杂SiC薄膜是一种非均匀掺杂;PPMS磁性测量表明,Co掺杂SiC薄膜具有明显的室温铁磁性,饱和磁化强度随着Co掺杂浓度的增加而增加,其铁磁性的来源符合缺陷机制的束缚磁极子(BMP)机制。
Co doped SiC films were prepared by the RF-magnetron sputtering.The XRD、XPS、Hall and ρ-T curve measurements show that the Co doped SiC films have a 4H-SiC（100）crystal orientation and typically features of semiconductor conduction properties.We did not discover metal Co clusters and other CoSi second phase compound in the films which revealing that Co is substituted enter the SiC lattice.The Volt-Ampere characteristic testing on the films,shows that the films is a kind of nonhomogeneous doping.The magnetic properties measurement by PPMS shows the Co-doped SiC films have room temperature ferromagnetic,the saturation magnetization increase with the increasing Co content.The ferromagnetism is correspondent with the Bound Magnetic Polarons（BMP） mechanism.
出处
《光电子．激光》
EI
CAS
CSCD
北大核心
2011年第7期1038-1041,共4页
Journal of Optoelectronics·Laser
基金
国家自然科学基金资助项目(10904110,60476003)
天津市自然科学基金资助项目(10JCYBJC01600)
天津市高等学校科技发展基金资助项目(20060902)
