摘要
In the frame of the ZeuS-Ill project, a model study was started on evaluation the area-specific resistances （ASRs） of various layers being used in SOFC stacks. It is well known that stack performance not only depends on cell resistance but also on the electrical conductivity of the various applied contact and protective layers. Various layers have been tested under simulated SOFC conditions, and results have shown that the lowest ASR value, about 3 mΩ.cm2, was obtained for an LSM （2） contact layer. A significantly higher resistance was found for the combined contact and protective layer LCC10-Mn3O4, being around 37 mΩ.cm2 Related to the various tests, the total ASR of an F-design stack, developed by Forschungszentrum Jiilich, under ideal conditions can be estimated. In this case the ASR value was calculated as the sum of that of the LCC10-Mn3O4 layer and the formed oxide scale due to oxidation of Crofer22APU. Contacting resistance at the anode side was considered negligible. When differences in the ASR values occurred when compared with that from current-voltage measurements performed with real SOFC stacks, this can be explained by the limited contact area between interconnect and cathode. These results can be used to model the influence of various applied layers and different geometric contact areas on the overall ASR as determined from performance measurements with SOFC stacks.
