摘要
采用高真空电子束蒸发与直流溅射在SiO2／Si基底上制备Pt／Ti底电极，对Pt／Ti在不同热处理温度下的结构与形貌进行对比研究。结果表明：由于采用不同的制备工艺，Pt晶粒在成核与生长方式上有所不同，导致了Pt薄膜在结构与形貌的差异。高真空电子束蒸发的Pt薄膜以织构的方式生长，致密而规则的柱状晶粒决定了它在高温下的连续性和稳定性，为制备高质量的铁电薄膜与其性能的研究提供了条件。
The microstructures and morphologies 0f Pt/Ti electrodes produced by ultra-high vacuum (UHV) electron beam evaporating and dc-sputtering at various temperatures have been investigated using X-ray diffraction, scanning electron microscopy and atomicforce microscopy. The results indicate that the microstructures and morphologies of Pt/Ti electrodes are dependent on the variousgrowing modes of Pt/Ti crystal grains. A dense columnar grain structure and texture were observed as a resu1t of electron beam vaporation. UHV electron beam evaporation results in a continuous and stable Pt/Ti film at high temperatures and is reccomended as a bottom electrode processing method for the preparation of ferroelectric thin films with fine properties.
出处
《稀有金属材料与工程》
SCIE
EI
CAS
CSCD
北大核心
1999年第5期305-309,共5页
Rare Metal Materials and Engineering
基金
国家"863"!715-002-0110
国家自然科学基金!6973020
关键词
薄膜
织构
底电极
铁电薄膜
铂
Pt film, texture, bottom electrode, ferroelectric thin film
