Preparation of BST nanocrystals embedded in SiO_2 film by magnetron sputtering for nonvolatile memory applications 被引量：2

Preparation of BST nanocrystals embedded in SiO_2 film by magnetron sputtering for nonvolatile memory applications

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摘要 We develop a method that uses magnetron sputtering to fabricate barium strontium titanate (BST) nanocrystals embedded in dielectric SiO2 films.Transmission electron microscope images show that the BST nanocrystals have an average diameter of 5 nm and are well distributed in the SiO2 film.In addition,we also analyze the BST nanocrystals composition deviation during the sputtering process by electron dispersive spectroscopy. We develop a method that uses magnetron sputtering to fabricate barium strontium titanate （BST） nanocrystals embedded in die- lectric SiO2 films. Transmission electron microscope images show that the BST nanocrystals have an average diameter of 5 nm and are well distributed in the SiO2 film. In addition, we also analyze the BST nanocrystals composition deviation during the sputtering process by electron dispersive spectroscopy.

作者 WANG Li SUN HongFang ZHOU HuiHua ZHU Jing

机构地区 Beijing National Center for Electron Microscopy

出处《Chinese Science Bulletin》 SCIE EI CAS 2011年第11期1139-1141,共3页

关键词 SIO2薄膜纳米晶体磁控溅射 BST 嵌入式非易失性 SI02 透射电子显微镜 BST nanocrystals, nonvolatile memory, magnetron sputtering

分类号 TP333 [自动化与计算机技术—计算机系统结构] O484.1 [自动化与计算机技术—计算机科学与技术]

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Chinese Science Bulletin

2011年第11期

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Preparation of BST nanocrystals embedded in SiO_2 film by magnetron sputtering for nonvolatile memory applications 被引量：2

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