摘要
采用时域有限差分法和近场—远场变换对两种不同材料的一维微尺度高斯粗糙表面辐射特性进行了数值模拟,并将计算结果与其他方法进行了对比分析.研究结果表明,对于理想导电材料表面,随着均方根粗糙度的增加,其双向反射率的尖峰值逐步减小并最终消失;随着均方根粗糙度与表面关联距离之比的增加,向后反射变得愈加明显;相同表面轮廓特征条件下,理想导电材料与硅粗糙表面的双向反射率的总体趋势相同但后者要远小于前者;随着入射角度的增大,理想导电材料粗糙表面的双向反射变得趋于像镜面反射.
The radiative properties of two different materials surfaces with one-dimensional microscale Gaussian roughness were numerically investigated with an FDTD（finite-difference time-domain） method and near-to-far-field transformation.Calculated results were compared with those from other two approaches.The bi-directional reflectivity peak decreased gradually and eventually disappeared with increasing perfectly electric conductor（PEC） surface RMS（root mean square） roughness.The retroreflection became evident as the ratio of RMS roughness to surface correlation distance increased.Given identical surface characteristics,the overall trend of the bi-directional reflectivity was the same for both PEC and silicon surfaces although the latter was much lower than the former.The reflection of the PEC surface became more like a mirror surface as incident angle increased.
出处
《东北大学学报（自然科学版）》
EI
CAS
CSCD
北大核心
2011年第4期529-532,共4页
Journal of Northeastern University(Natural Science)
基金
国家高新技术研究发展计划项目(2009AA05Z215
2008AA042901)
关键词
双向反射率
高斯粗糙表面
时域有限差分法
麦克斯韦方程
理想导电材料
bi-directional reflectivity
Gaussian rough surface
finite-difference time-domain method
Maxwell＇s equations
perfectly electric conductor
