摘要
将具有能量９２ｋｅ Ｖ、剂量１×１０１５／ｃｍ ２ 的 Ｂ Ｆ＋ 注入由 Ｐ Ｅ Ｃ Ｖ Ｄ 方法制备的ａ Ｓｉ∶ Ｈ 薄膜中，然后用功率为 ６０ Ｗ 、束斑直径 ０２ｃｍ 的 Ｃ Ｗ Ｃ Ｏ２ 激光器进行 １０ｓ 快速退火。再用扫描电子显微镜（ Ｓ Ｅ Ｍ）进行显微形貌观察。分析结果指出：由于 Ｂ Ｆ＋ 的注入，使ａ Ｓｉ∶ Ｈ 薄膜中产生了多重结构缺陷，其表面轮廓是类似矩形和方形的图形；发现退火中的晶化是从这些缺陷的棱边开始。最后对晶化过程和机理进行了讨论。
BF\++ with 92keV and 1×10 15 /cm\+2 was implanted into a\|Si∶H film prepared by PECVD,then implanted sample has been rapid annealed using CWCO\-2 Laser with output of 60W and spot size 0 2cm in diameter at 10s time.Microscopic topographies analysis with SEM indicate that:Under our annealing condition,the profiles of multi\|structure defects in a\|Si∶H film produced by BF\++ implanting are some shapes of rectangle\|like and square\|like.Crystallization started from the edges of multi\|structure defects.Crystallized procedure and the mechanism have been discussed.
出处
《电子显微学报》
CAS
CSCD
1999年第4期430-433,共4页
Journal of Chinese Electron Microscopy Society
关键词
氢化非晶硅
薄膜
快速退火
离子注入
显微分析
hydrogenated amorphous silicon film
rapid annealing
ion implantation
crystallization
