摘要
采用热丝化学气相淀积生长法，在Ｓｉ衬底上外延生长３Ｃ－ＳｉＣ薄层获得成功．生成源为ＣＨ４＋ＳｉＨ４＋Ｈ２混合气体，热丝温度约为１８００～２０００℃，碳化和生长时衬底温度低于１０００℃．用Ｘ射线衍射，变角椭偏法等分析手段研究了外延层的晶体结构和光学常数．Ｘ射线衍射结果显示出３Ｃ－ＳｉＣ薄层的外延生长特征，变角椭偏法测量出外延层的折射率为２．６８６。
C SiC thin films have been epitaxially grown on Si (111) and (100) substrates simultaneously at a temperature lower than 1 000℃ by HFCVD method using SiH 4+CH 4+H 2 source gasses. The thin films are characterized by X ray diffraction (XRD) and variable angle spectroscopic ellipsometry ( VASE ) etc. XRD results reveal the epitaxial growth feature of 3C SiC on Si substrates. VASE result shows that the refractive index of the epilayer at 500 nm is 2 686 which is equal to that reported for the single crystal 3C SiC and that the structure is related to the substrate orientation.
出处
《西安电子科技大学学报》
EI
CAS
CSCD
北大核心
1999年第4期480-482,492,共4页
Journal of Xidian University
基金
国家自然科学基金
关键词
碳化硅
外延
薄层
结构
光学常数
SiC
epitaxy
film
structure
optical constant
