摘要
提出一种适用于微机电系统(MEMS)圆片级真空封装的键合结构,通过比较分析各种键合工艺的优缺点后,选择符合本试验要求的金硅键合工艺。根据所提出键合结构和金硅键合的特点设计键合工艺流程,在多次试验后优化工艺条件。在此工艺条件下,选用三组不同结构参数完成键合试验。之后对比不同的结构参数分别测试其键合质量(包括键合腔体泄漏率和键合强度的检测)。完成测试后对不同结构参数导致键合质量的差异做出定性分析,同时得到适用于MEMS圆片级真空封装的金硅键合结构和键合工艺。最后对试验做出总结和评价,并对试验中的不足之处提出后续改进建议。
A new kind bonding structure that applicable to MEMS（Micro Electro Mechanical Systems）wafer level vacuum packaging had been reported,Au-Si bonding which meets the requirements is selected by analysing the merits and demerits of all kinds of bonding processes.The bonding process condition are designed by the structure that put forward and characteristics of Au-Si bonding,and optimized by plenty of tests.In this bonding process condition,different bonding experiments are completed under 3 different structure parameters.The different bonding qualities（including leakage rate test and bonding strength test） of different structure parameters are tested.After this,qualitative analysis that different bonding qualities caused by different structure parameters is given.A bonding structure and process which suit for Au-Si bonding are received.In the end,the summary and the evaluation are given,and the drawbacks and related proposals of this experiment are put forward.
出处
《电子与封装》
2011年第1期1-4,共4页
Electronics & Packaging
基金
国家高技术研究发展计划(863计划)课题:长寿命MEMS圆片级真空封装技术的研究(编号:2008AA04Z30711)
