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The Effects of Chemical (isotropic) and Anisotropic Etching Processes on the Roughening of Nanocomposite Substrates

The Effects of Chemical (isotropic) and Anisotropic Etching Processes on the Roughening of Nanocomposite Substrates
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摘要 Simulation results of roughening of nanocomposite materials during both isotropic and anisotropic etching processes based on the level set method are presented. It is clearly shown that the presence of two phases with different etching rates affects the development of surface roughness and that some roughness characteristics obey simple scaling laws. In addition, certain scaling laws that describe the time dependence of the root mean square (rms) roughness w for various etching processes and different characteristics of the nanocomposite materials are determined. Simulation results of roughening of nanocomposite materials during both isotropic and anisotropic etching processes based on the level set method are presented. It is clearly shown that the presence of two phases with different etching rates affects the development of surface roughness and that some roughness characteristics obey simple scaling laws. In addition, certain scaling laws that describe the time dependence of the root mean square (rms) roughness w for various etching processes and different characteristics of the nanocomposite materials are determined.
机构地区 Institute of Physics
出处 《Plasma Science and Technology》 SCIE EI CAS CSCD 2010年第6期673-676,共4页 等离子体科学和技术(英文版)
基金 carried out under MNZ■S 141025 project
关键词 NANOCOMPOSITE ROUGHNESS SMOOTHING isotropic etching anisotropic etching nanocomposite, roughness, smoothing, isotropic etching, anisotropic etching
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