摘要
利用SEM-EDS研究了硅衬底上Au、Cu薄膜发射的不同线系特征X射线相对强度间比值随出射角的变化规律,探讨了影响其变化的原因。结果显示:随着出射角变大,同一元素不同线系X射线相对强度间比值具有一定变化规律。低能量谱线的强度相对高能量谱线逐渐变大,这种变化主要是受X射线被基体吸收效应的影响所致。在低角度下,特别是在特征X射线全反射临界角附近,实际测得的低能量特征谱线的相对强度比预期要小,这是因为这些低能量谱线的波长较长,相对于这些谱线的全反射临界角较大,由膜内产生的低能量谱线,探测器无法探测到而引起。此项研究为X射线薄膜微区分析的定量计算提供依据。
The variation of the ratio of relative intensity of different line series of characteristic X-rays emitted from Au and Cu thin films on Si wafers with exit angle was studied by SEM-EDS.And the reason for the variation was discussed.The results show that the ratio of relatively intensity of different line series of characteristic X-rays for the same element changes with increase of exit angle.The intensity of low energy spectrum line gradually increases with the increase of exit angle,compared with that of high energy spectrum line,which is mainly due to the absorption of X-rays by substrate.Under the low angle,especially near the characteristic X-rays total reflection critical angle,the measured relative intensity of low energy characteristic spectrum line is lower than the expected value.The reason is that the wavelength of low energy characteristic spectrum line is relatively longer,and the corresponding total reflection critical angle is bigger,which makes low energy characteristic spectrum line emitted from the film can not be detected.
出处
《电子显微学报》
CAS
CSCD
北大核心
2010年第5期430-436,共7页
Journal of Chinese Electron Microscopy Society
基金
河北省自然科学基金资助项目(No.E2004000117)
