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Sb吸附在InP(110)表面电子性质的理论研究 被引量:2

ELECTRONIC STRUCTURE OF Sb ON InP(110) SURFACE STUDIED THEORETICALLY 
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摘要 利用形式散射的格林函数方法,研究了Sb在InP(110)表面单层吸附时的电子性质.分别计算了清洁的InP(110)弛豫表面和InP(110)Sb(1ML)体系的表面态的性质,指出了表面态和表面共振态产生的原因. Abstract Based on the tight binding scattering theoretical method,the electronic strucutre of Sb adsorped on the surface of InP(110) is studied.Surface states and surface resonances are identified from the calculated local density of states along the four zone boundaries of the (110) surface Brillouin zone.Some results are in good agreement with the experiment and better than other theoretical results.
出处 《物理学报》 SCIE EI CAS CSCD 北大核心 1999年第7期1334-1339,共6页 Acta Physica Sinica
基金 河南省自然科学基金
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  • 1王松有,物理学报,1998年,47卷,1695页 被引量:1

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