摘要
针对光电子器件端面抗反镀膜的要求,研究了基于等离子体增强化学气相沉积(PECVD)技术的多层抗反膜的设计和制作.首先,对影响SiNx折射率的因素进行了实验研究,确定了具有大折射率差的SiO2/SiNx材料的PECVD沉积条件.根据理论计算分析,设计了四层SiO2/SiNx抗反膜结构,能够在70nm的波长范围内实现低于10-4的反射率,并且当单层膜厚度变化在±5nm以内时,中心波长1550nm处的反射率低于5×10-4.根据计算结果,在F-P激光器端面进行了SiO2/SiNx多层抗反镀膜的制作.对输出光功率谱的测试分析表明,在1535—1565nm范围内的残余反射率达到了10-4量级。
The design and fabrication of multilayer antireflection（AR） coating based on plasma enhanced chemical vapor deposition（PECVD） is studied for its applications in optoelectronic devices.Deposition conditions for obtaining SiO2 /SiNx thin films with large refractive index difference is determined through systematic study of factors influencing the refractive index of deposited SiNx.Four-layer SiO2 /SiNx AR coating is designed to exhibit a reflectivity of less than 10-4 over 70 nm bandwidth.Reflectivity of the thin film structure at the center wavelength of 1550 nm remains less than 5 × 10-4 when the thickness deviation of any single layer is within ± 5 nm from the designed value.Based on the simulation results,SiO2 /SiNx multilayer AR coating is deposited on the end facet of a Fabry-Perot laser.By analyzing the output spectra of the laser,the residual reflectivity of the AR coating is determined to be on the order of 10-4 over the wavelength range of 1535—1565 nm.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
2010年第10期7239-7244,共6页
Acta Physica Sinica
基金
国家自然科学基金(批准号:60536020
60723002
50706022
60977022)
国家重点基础研究发展计划(批准号:2006CB302800
2006CB921106)资助的课题~~
关键词
抗反膜
等离子体增强化学气相沉积
二氧化硅/氮化硅多层膜
antireflection（AR） coating
plasma enhanced chemical vapor deposition
SiO2 /SiNx multilayer thin film
