摘要
采用扫描电镜、能谱、X-射线衍射及透射电镜等技术分析了一种无金属催化辅助下制得的SiC纳米线的生长过程及生长机制.结果表明:在生长初期SiC纳米线端部就形成凝固熔滴.凝固熔滴在随后的纳米线择优沿[111]方向生长过程中不断地向前推进.凝固熔滴中除了含有Si和C以外,还含有O.SiC纳米线的生长机制因属于气-液-固机制,反应气氛中的氧代替金属催化剂参与了SiC纳米线的形核及生长.
The growth processes and mechanism of SiC nanowires without assistance of metal catalyst have been analyzed by scanning electron microscopy,energy dispersive spectroscopy,X-ray diffraction and transmission electron microscopy.The results showed that solidified droplet on the top of the SiC nanowires was formed at the first stage of nanowires growth,and always kept with nanowires growth.The solidified droplet consisted of Si,C and O.The growth mechanism of SiC nanowires belonged to VLS mechanism.The oxygen in reaction atmosphere instead of metal catalyst participated in the nucleation and growth of SiC wires.
出处
《江西师范大学学报（自然科学版）》
CAS
北大核心
2010年第4期350-353,共4页
Journal of Jiangxi Normal University(Natural Science Edition)
