摘要
The （Bi0.9Ho0.1）3.999Ti2.997V0.003012 （BHTV） films have been prepared on Pt/Ti/SiO2/Si substrates by solgel method. The microstructure and ferroelectric properties of the BHTV films were investigated. The BHTV films show a single phase of Bi-layered Aurivillius structure and dense microstructure. The Ho3＋/V5＋ cosubstitution can effectively improve the ferroelectric properties. The BHTV film exhibits good ferroelectric properties with 2Pr of 47.6℃/cm2, 2Ec of 265 kV/cm （at applied field of 420 kV/cm）, dielectric constant of 305, dielectric loss of 0.031 （at 1 MHz）, good insulting behavior, as well as the fatigue-free behavior.
The （Bi0.9Ho0.1）3.999Ti2.997V0.003012 （BHTV） films have been prepared on Pt/Ti/SiO2/Si substrates by solgel method. The microstructure and ferroelectric properties of the BHTV films were investigated. The BHTV films show a single phase of Bi-layered Aurivillius structure and dense microstructure. The Ho3＋/V5＋ cosubstitution can effectively improve the ferroelectric properties. The BHTV film exhibits good ferroelectric properties with 2Pr of 47.6℃/cm2, 2Ec of 265 kV/cm （at applied field of 420 kV/cm）, dielectric constant of 305, dielectric loss of 0.031 （at 1 MHz）, good insulting behavior, as well as the fatigue-free behavior.
基金
supported by the Young Scientists Fund of the National Natural Science Foundation of China under grant No.50902108
