摘要
论述了低红外发射率半导体颜料研究的必要性,介绍了低发射率半导体颜料的特性、研究进展与制备方法。建议低发射率半导体颜料的研究按以下方面进行:深入研究半导体的掺杂理论,探索半导体颜料掺杂含量对涂料红外性能的影响,不同半导体颜料的制备方法和工艺条件的选择研究,以及不同颜色体系的半导体颜料的合成等。
The necessity of research on the semiconductor pigment with low infrared emissivity was discussed, and the characteristics, study progress and preparation methods of semiconductor pigment with low infrared emissivity were introduced. It is suggested that the investigation of the semiconductor pigment with low infrared emissivity should be carried out focusing on the following aspects： doping theory of semiconductor, influence of the doping content of semiconductor pigment on infrared performance, different preparation methods and selection of process conditions and synthesis of semiconductor pigments with various color systems, etc.
出处
《电镀与涂饰》
CAS
CSCD
北大核心
2010年第9期65-67,共3页
Electroplating & Finishing
关键词
伪装涂料
半导体颜料
低红外发射率
掺杂
camouflage coating
semiconductor pigment
low infrared emissivity
doping
