摘要
掩模制备是硅各向同性刻蚀中的一项重要工艺。要实现深刻蚀,掩模必须满足结构致密、强度大及抗腐蚀性好的要求。一般光刻胶掩模无法在刻蚀液中较长时间地保持其掩蔽性能,很难实现深刻蚀;而金属掩模也容易出现针孔及裂纹等缺陷。因此提出使用Su-8负性光刻胶结合铬金属制备多层掩模。这种掩模结构制备工艺简单,经济实用;提高了掩模在高速刻蚀时的掩蔽性能,实现了深刻蚀。实验表明,其能满足300μm以上深刻蚀的要求,可用于硅及玻璃等材料的微加工。
Mask preparation is a very important technique in isotropic etching of silicon.Especially for deep etching,it is necessary to have a dense and solid mask with high resistance against etching solution.Normal photoresist is not endurable in long-time etching and metal mask sometimes has the defects of pin-hole and crack.Thus a multilayer mask is presented,which consists of a Cr metal layer and a Su-8negative photoresist layer.This kind of multilayer mask can be prepared conveniently and economically without special equipments.By the aid of this multilayer structure,the protective ability of etching mask is improved and the deep etching is realized.The results of experiments indicate that this mask is capable for deep etching with the depth over 300μm.And this mask technique can also be used in glass etching.
出处
《半导体光电》
CAS
CSCD
北大核心
2010年第4期553-556,共4页
Semiconductor Optoelectronics
基金
国家"973"计划项目(2009CB724204)
国家自然科学基金项目(50805061)
关键词
硅微机械加工
各向同性刻蚀
多层掩模
深刻蚀
silicon micromachining
isotropic etching
multilayer mask
deep etching
