摘要
利用Hopkinson杆对弹载存储测试电路模块常用的两种晶振:EXO3,KSS晶振,在未用环氧树脂胶灌封和灌封状态下进行了不同冲击方向(沿平行和垂直方向)的抗高g值冲击性能研究,并对它们的失效机理进行了分析.结果表明:因为晶振内部有微梁,当晶振在高g值加速度冲击下时,微梁可能发生断裂,这将导致晶振的失效.另外,晶振抗冲击能力与冲击加速度方向有关,与冲击方向平行时晶振的抗冲击性能要明显高于与冲击方向垂直的情况;对同一个冲击方向而言,经过环氧树脂灌封的晶振抗冲击能力并没有明显高于未灌封的晶振,这可能是由于电路板上焊点、导线断开造成的.
The Hopkinson bar was employed to the anti-high g shock capability of two kinds of crystal oscillator often used in on-board memory test circuit： EXO3 and KSS which was no-potted or potted with epoxy resin and potted along vertical and parallel direction to the shock,then its failure mechanism was analyzed.It shows that because the micro-beam exists in the crystal oscillator,which will rupture and result in failure to the crystal oscillator acted by high g shock acceleration.Moreover,the anti-high g shock capability of crystal oscillator is related to the direction of shock acceleration, and the capability in parallel direction is distinctly better than that in vertical direction;for the same shock direction,the anti-high g shock capability of the potted crystal oscillators aren′t distinctly better than in the nopotted,which is likely to be caused with the break of welded points,leads on the circuit plate.
出处
《中北大学学报（自然科学版）》
CAS
北大核心
2010年第4期424-428,共5页
Journal of North University of China(Natural Science Edition)
基金
山西省高校科技研究开发项目
关键词
晶振
加速度
冲击
失效机理
crystal oscillator
acceleration
shock
failure
