摘要
A novel depletion-mode NJFET compatible high-voltage BiCMOS process is proposed and experimentally demonstrated with a four-branch 12-bit DAC（digital-to-analog converter）.With this process,an NJFET with a pinch-off voltage ofabout-1.5 V and a breakdown voltage of about 16 V,an NLDDMOS（N-type lightly-dosed-drain in MOS） with a turn-on voltage of about 1.0 V and a breakdown voltage of about 35 V,and a Zener diode with a reverse voltage of about 5.6 V were obtained.Measurement results showed that the converter had a reference temperature coefficient of less than±25 ppm/℃,a differential coefficient error of less than±0.3 LSB,and a linear error of less than±0.5 LSB.The depletion-mode NJFET and its compatible process can also be widely used for high-voltage ADCs or DACs.
A novel depletion-mode NJFET compatible high-voltage BiCMOS process is proposed and experimentally demonstrated with a four-branch 12-bit DAC（digital-to-analog converter）.With this process,an NJFET with a pinch-off voltage ofabout-1.5 V and a breakdown voltage of about 16 V,an NLDDMOS（N-type lightly-dosed-drain in MOS） with a turn-on voltage of about 1.0 V and a breakdown voltage of about 35 V,and a Zener diode with a reverse voltage of about 5.6 V were obtained.Measurement results showed that the converter had a reference temperature coefficient of less than±25 ppm/℃,a differential coefficient error of less than±0.3 LSB,and a linear error of less than±0.5 LSB.The depletion-mode NJFET and its compatible process can also be widely used for high-voltage ADCs or DACs.
