摘要
利用射频磁控溅射技术在玻璃衬底上沉积了MgxZn1-xO(x=0～0.2)薄膜。采用X射线衍射仪、紫外-可见光分光光度计和荧光光谱仪研究了Mg掺杂量对MgxZn1-xO薄膜结构与光学性能的影响。XRD图谱表明,MgxZn1-xO薄膜均为六角纤锌矿结构,并且呈现出c轴择优生长特性,当x>0.1时薄膜出现(100)面衍射峰,薄膜的c轴择优生长特性减弱,随着x值的增加,晶格常数c逐渐减小。紫外可见光透射光谱表明,Mg的掺入提高了薄膜在可见光范围内的透过率,同时使薄膜的禁带宽度增大。PL谱分析显示,Mg的掺入使薄膜的紫外发射峰和蓝光发射带发生蓝移,当x=0.1时近带边发射峰与杂质发射的强度比值最高。
MgxZn1-xO（x=0-0.2） thin films on glass substrates are deposited by RF magnetron sputtering. Structure and optical properties are studied by X-ray diffraction, UV-visible spectrometer and fluorescence spectrome- ter. The XRD results indicate that MgxZn1-xO thin films retains the hexagonal wurtzite structure. The films show a typical preferred orientation of crystallites along with c-axis. When the value of x is greater than 0. 1, the（100） diffraction peak appears, which indicate that a typical preferred orientation of crystallites along with c-axis decreases. The lattice constants c decreases with the increase of the value of x. The transmittance measurement results show that Mg doping in thin films enlarge the transmittance in the visible region and the band gap of the thin films. Photoluminescence（PL） spectra shows that the UV emission peak and blue luminescence band of all the films shift to the high energy as Mg doping. When the value of 3： is 0. 1, the ratio of near-hand-energy to the defect-level peak intensity is highest.
出处
《材料导报》
EI
CAS
CSCD
北大核心
2010年第16期9-11,17,共4页
Materials Reports
基金
北京市教育委员会科技计划面上项目(KM200810017009)
